Description
Description
The MJE13003 is a high-voltage NPN bipolar junction transistor designed for medium-current switching and power control applications. It supports a collector-emitter voltage of up to 400V and continuous collector current up to 2A, making it ideal for off-line switching power supplies, inverters, ballast circuits, and high-voltage driver stages. With fast switching performance, low saturation voltage, and strong thermal handling in a TO-220 package, the MJE13003 is widely used in SMPS designs and power electronics.
Features
- High-voltage NPN bipolar transistor
- Collector-emitter voltage up to 400V
- Continuous collector current up to 2A
- Optimized for switching power applications
- Fast switching performance
- Low saturation voltage for improved efficiency
- High power dissipation capability
- Suitable for off-line power supplies
- Reliable repetitive switching operation
- TO-220 package for better heat dissipation
- Stable DC gain characteristics
- Suitable for inverter and ballast circuits
- High-voltage driver capability
- Easy mounting with heatsink support
Specifications
- Model: MJE13003
- Device Type: NPN Bipolar Junction Transistor (BJT)
- Polarity: NPN
- Collector-Emitter Voltage (Vce): 400V
- Collector-Base Voltage (Vcb): 700V
- Emitter-Base Voltage (Veb): 9V
- Maximum Collector Current (Ic): 2A
- Power Dissipation: Approximately 75W
- DC Current Gain (hFE): 8 40
- Transition Frequency (fT): Approximately 4MHz
- Package Type: TO-220
- Mounting Type: Through-Hole
- Operating Temperature Range: -55C to +150C
- Application Type: High-Voltage Switching
Links
- Datasheet
Tutorials
- 13003 Transistor Stereo Amplifier | Powerful Stereo Amplifier.
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