2N2905 PNP Bipolar Junction Transistor TO-39 Metal Package

Description

Description

The 2N2905 is a general-purpose PNP bipolar junction transistor designed for switching and amplification in low- to medium-power applications. Housed in a durable TO-39 metal can package, it offers improved thermal dissipation and mechanical robustness compared to plastic package transistors. With a collector-emitter voltage rating of 60V and collector current up to 600mA, the 2N2905 is suitable for signal amplification, driver stages, industrial control circuits, and complementary transistor designs. Its stable electrical performance and high-temperature tolerance make it a reliable choice for demanding analog and switching applications.

Features

• General-purpose PNP bipolar transistor
• Collector-emitter voltage up to 60V
• Collector current up to 600mA
• Durable TO-39 metal package
• Improved thermal performance
• Suitable for switching and amplification
• Stable DC current gain
• Low saturation voltage for efficient switching
• Reliable operation at high temperatures
• Moderate-speed signal handling
• Good mechanical durability
• Suitable for industrial applications
• Through-hole mounting for secure installation
• Ideal for analog and driver circuits

Specifications

• Model: 2N2905

• Device Type: PNP Bipolar Junction Transistor (BJT)

• Polarity: PNP

• Collector-Emitter Voltage (Vce): 60V

• Collector-Base Voltage (Vcb): 60V

• Emitter-Base Voltage (Veb): 5V

• Maximum Collector Current (Ic): 0.6A

• Power Dissipation: Approximately 1.8W

• DC Current Gain (hFE): 20 60

• Transition Frequency (fT): Approximately 20MHz

• Package Type: TO-39 Metal Can

• Mounting Type: Through-Hole

• Operating Temperature Range: -65C to +200C

• Application Type: Amplification and Switching

Links

• 3D Model
• Datasheet

Tutorials

• NPN & PNP Transistors explained – electronics engineering